The specification of aluminum oxide grinding Indium phosphide InP wafers from China
Recently several years,China factories started to study and produced aluminum oxide which are used for grinding and lapping wafer,semiconductors etc.
Zhengzhou haixu abrasives co.,ltd is one of the factories, we produce the aluminum oxide which is similar to PWA from FUJIMI.

Now we have customers who use our aluminum oxide grinding and lapping Indium phosphide InP wafers steadily.
The specification of our aluminum oxide used for grinding Indium Phosphide InP wafers is as follows:
Chemical compostion %
| Al2O3 | >99.0% |
| SiO2 | <0.2% |
| Fe2O3 | <0.1% |
| Na2O | <1% |
Physical Properties
| Mohs Hardness | 9.0 |
| Specific Gravity | >3.9g/cm3 |
| Shape | Plate-shape |
PSD(Particle Size Distribution) tested result
