The specification of aluminum oxide grinding Indium phosphide InP wafers from China

The specification of aluminum oxide grinding Indium phosphide InP wafers from China

Recently several years,China factories started to study and produced aluminum oxide which are used for grinding  and lapping wafer,semiconductors etc.

Zhengzhou haixu abrasives co.,ltd is one of the factories, we produce the aluminum oxide which is similar to PWA from FUJIMI.

Aluminum Oxide grinding Indium Phosphide wafers
Aluminum Oxide grinding Indium Phosphide wafers

Now we have customers who use our aluminum oxide grinding and lapping Indium phosphide InP wafers steadily.

The specification of our aluminum oxide used for grinding Indium Phosphide InP wafers is as follows:

 Chemical compostion %            

Al2O3>99.0%
SiO2<0.2%
Fe2O3<0.1%
Na2O<1%

Physical Properties

Mohs Hardness9.0
Specific Gravity>3.9g/cm3
ShapePlate-shape

PSD(Particle Size Distribution) tested result

Aluminum oxide A12
Aluminum oxide A12

 

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